features trenchfet power mosfet 175 c junction temperature 100% r g tested sum40n03-30l vishay siliconix new product document number: 73245 s-50140?rev. a, 24-jan-05 www.vishay.com 1 n-channel 30-v (d-s) 175 c mosfet product summary v (br)dss (v) r ds(on) ( ) i d (a) q g (typ) 30 0.030 @ v gs = 10 v 40 18 30 0.045 @ v gs = 4.5 v 33 18 drain connected to tab to-263 s d g top view ordering information: sum40n03-30l?e3 n-channel mosfet g d s absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d 40 continuous drain current (t j = 175 c) t c = 100 c i d 36 a pulsed drain current i dm 40 a single pulse a valanche current i as 30 repetitive a valanche energy a l = 0.1 mh e as 31.25 mj maximum power dissipation a t c = 25 c p d 100 b w maximum power dissipation a t a = 25 c c p d 3.75 w operating junction and storage temperature range t j , t stg ? 55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 40 c/w junction-to-case r thjc 1.5 c/w notes a. duty cycle 1%. b. see soa curve for voltage derating. c. when mounted on 1? square pcb (fr-4 material).
sum40n03-30l vishay siliconix new product www.vishay.com 2 document number: 73245 s-50140?rev. a, 24-jan-05 specifications (t j =25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = 250 a 30 v gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 3 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 30 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 125 c 50 a g dss v ds = 30 v, v gs = 0 v, t j = 175 c 150 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 30 a v gs = 10 v, i d = 15 a 0.020 0.030 drain source on state resistance a r v gs = 10 v, i d = 15 a, t j = 125 c 0.050 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 15 a, t j = 175 c 0.054 v gs = 4.5 v, i d = 12.5 a 0.030 0.045 forward transconductance a g fs v ds = 15 v, i d = 15 a 10 22 s dynamic b input capacitance c iss 1170 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 320 pf reverse transfer capacitance c rss 60 total gate charge b q g 18 26 gate-source charge b q gs v ds = 15 v, v gs = 10 v, i d = 30 a 5.5 nc gate-drain charge b q gd ds , gs , d 2 gate resistance r g 0.9 1.8 2.7 turn-on delay time b t d(on) 10 20 rise time b t r v dd = 15 v, r l = 0.5 10 20 ns turn-off delay time b t d(off) v dd = 15 v , r l = 0 . 5 i d 30 a, v gen = 10 v, r g = 2.5 25 40 ns fall time b t f 15 30 source-drain diode ratings and characteristics (t c = 25 c) c continuous current i s 40 a pulsed current i sm 40 a forward voltage a v sd i f = 30 a, v gs = 0 v 1.1 1.5 v reverse recovery time t rr 50 100 ns peak reverse recovery current i rm i f = 30 a, di/dt = 100 a/ s 3.9 7.8 a reverse recovery charge q rr f 98 390 nc notes a. pulse test; pulse width 300 s, duty cycle 2%. b. independent of operating temperature. c. guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratin gs only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability.
sum40n03-30l vishay siliconix new product document number: 73245 s-50140?rev. a, 24-jan-05 www.vishay.com 3 typical characteristics (25 c unless noted) 0 6 12 18 24 30 0 8 16 24 32 40 0 300 600 900 1200 1500 0 6 12 18 24 30 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) ? on-resistance ( q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) r ds(on) ? ) v gs ? transconductance (s) g fs 0 8 16 24 32 40 012345 0 2 4 6 8 10 0 3 6 9 12 15 18 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0 8 16 24 32 40 0 8 16 24 32 40 0123456 25 c ? 55 c t c = 150 c v ds = 15 v i d = 30 a v gs = 10, 9, 8, 7, 6, 5 v v gs = 10 v v gs = 4.5 v c rss t c = ? 55 c 25 c 125 c 3 v 4 v c oss c iss i d ? drain current (a)
sum40n03-30l vishay siliconix new product www.vishay.com 4 document number: 73245 s-50140?rev. a, 24-jan-05 typical characteristics (25 c unless noted) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 15 a t j = 25 c t j = 175 c 0 r ds(on) ? on-resiistance (normalized) thermal ratings maximum drain current vs. caset emperature 0 10 20 30 40 50 0 25 50 75 100 125 150 175 safe operating area ? drain current (a) i d 200 10 0.1 0.1 1 10 100 1 100 t c = 25 c single pulse 1 ms 10 ms 100 ms dc t c ? case temperature ( c) ? drain current (a) i d *limited by r ds(on) v ds ? drain-to-source voltage (v) *v gs minimum v gs at which r ds(on) is specified
sum40n03-30l vishay siliconix new product document number: 73245 s-50140?rev. a, 24-jan-05 www.vishay.com 5 thermal ratings normalized effective transient thermal impedance normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 1 0.2 0.1 duty cycle = 0.5 3 0.02 0.05 single pulse vishay siliconix maintains worldw ide manufacturing c apability. pr oducts may be manufactured at on e of several qualified locati ons. reliability data for silicon technology and package reliability repr esent a composite of all qualified locations. for re lated documents such as package/tape drawings, par t marking, and reliability data, see http://www.vishay.com/ppg?73245 .
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